NEO Semiconductor Introduces Performance Boosting Mechanism for 3D X-DRAM

NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, has announced a groundbreaking Floating Body Cell Mechanism for 3D X-DRAM. The announcement was made by Andy Hsu, Founder & CEO, during the 16th IEEE International Memory Workshop (IMW) 2024 in Seoul, Republic of Korea.

Neo Semiconductor has unveiled a unique performance boosting mechanism known as Back-gate Channel-depth Modulation (BCM) for Floating Body Cell. This mechanism can increase data retention by 40,000X and sensing window by 20X. According to Andy Hsu, "Unlike the traditional 2D Floating Body Cell that uses body effect to change the cell current, our BCM mechanism employs a back-gate voltage to modulate the channel depth. This patented invention significantly enhances sensing window and data retention, resulting in faster and more reliable DRAM, and reducing the refresh frequency to save power."

NEO Semiconductor's 3D X-DRAM is a first-of-its-kind 3D NAND-like DRAM cell array structure based on floating body cell technology. It can be manufactured using today's mature 3D NAND-like process. The technology is estimated to achieve 128 Gb density with 300 layers, which is 8 times today's DRAM density, while also reducing the chip's footprint and power consumption.