Chinese Memory Manufacturers Embrace Domestic DDR5 DRAM from CXMT
Chinese technology companies Gloway and KingBank, known for their consumer DDR5 memory kits, have begun integrating domestically produced DDR5 DRAM from ChangXin Memory Technologies (CXMT) into their products. This strategic shift marks a significant milestone, as it reduces their reliance on international DRAM suppliers such as Micron, SK hynix, and Samsung, following years of dependence on foreign memory technology.
Introduction of 24 Gb DDR5 Modules in High-Capacity RAM Kits
Recent reports indicate that both Gloway and KingBank are now utilizing CXMT's 24 Gb DDR5 memory modules in their latest RAM kits. These modules are being shipped as part of 48 GB DDR5 memory kits, with each module offering 3 GB of capacity. Each DDR5 DIMM contains eight modules, resulting in a total of 24 GB per DIMM. In a standard dual-DIMM configuration, users can access a combined 48 GB of high-speed memory, catering to demanding computing tasks and next-generation platforms.
Technical Specifications and Custom Features
Gloway has introduced the Longwuyi Yi Special Edition DDR5 kit, designed specifically for AMD CPUs. This memory kit operates at a data rate of 6,000 MT/s and features latency timings of CL36-38-38-80. It runs at a voltage of 1.2 V and incorporates custom heat spreaders to enhance cooling efficiency. The kit also includes 5 W/mK thermal pads to further manage heat dissipation during intensive workloads.
KingBank’s DDR5 DIMMs are equipped with 2 mm heat spreaders and utilize a custom thermal interface material applied over the power management integrated circuit (PMIC). Additionally, these modules feature dual-side RGB LED lighting, which can be customized through software, offering both performance and aesthetic appeal for PC enthusiasts.
Advancements in CXMT DDR5 Technology
Earlier this year, CXMT began shipping 16 Gb DDR5 chips capable of running at speeds up to 8,000 MT/s. These chips measure 67 mm² and offer a density of 0.239 Gb per square millimeter. The latest G4 DRAM cells are approximately 20% smaller than the previous G3 generation, reflecting ongoing advancements in manufacturing technology. CXMT’s development has progressed from 23 nm (G1) and 18 nm (G2) process nodes to the current generation, enabling higher densities and improved efficiency.
While the new 24 Gb DDR5 modules are now in mass production, they currently operate at slightly lower speeds of around 6,000 MT/s. Achieving higher transfer rates will likely require further tuning, including the integration of additional clock drivers and optimization of module design.
Implications for the Global Memory Market
The adoption of CXMT’s DDR5 memory by leading Chinese manufacturers signals a growing trend toward technological self-sufficiency in the semiconductor industry. As domestic DRAM production scales up, consumers can expect increased availability of high-capacity, high-performance DDR5 memory kits tailored for modern computing platforms.
